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    DSI45-08A V = VR 800 A2s A2s 1.13 kA2s 1.15 kA2s Symbol Definition Ratings typ. max. IR V IFAV A VF 1.26 RthJC 0.55 K/W min. 45 VRSM V 40 T = 25°CVJ T = °CVJ 150 mA 1.5 V = VR 800 T = 25°CVJ I = AF 45 V T = °CC 130 Ptot 270 W T = 25°CC RthCH K/W max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation Conditions Unit 1.57 T = 25°CVJ VF0 V 0.81 T = °CVJ 175 rF 9.1 m? V 1.23 T = °CVJ 150 I = AF 45 V 1.66 I = AF 90 I = AF 90 threshold voltage slope resistance for power loss calculation only μA VRRM V 800 max. repetitive reverse blocking voltage T = 25°CVJ CJ 18 junction capacitance V = V;R 400 T = 25°Cf = 1 MHz VJ pF IFSM t = 10 ms; (50 Hz), sine T = 45°CVJ max. forward surge current T = °CVJ 150 I2t T = 45°CVJ value for fusing T = °CVJ 150 V = 0 VR V = 0 VR V = 0 VR V = 0 VR t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine T = °CVJ 175 480 520 840 805 A A A A 410 440 180° sine average forward current thermal resistance junction to case thermal resistance case to heatsink Rectifier 900 0.25 IXYS reserves the right to change limits, conditions and dimensions. 20130215d Data according to IEC 60747and per semiconductor unless otherwise specified ? 2013 IXYS all rights reserved |